MTV20N50E |
RFQ for MTV20N50E |
![]() |
| Product | Manufacturers | Pack | D/C |
| MTV20N50E | - | TO-263 | 9929 |
Features |
| • Robust High Voltage Termination• Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Short Heatsink Tab Manufactured Not Sheared• Specifically Designed Leadframe for Maximum Power Dissipation• Available in 24 mm, 13inch/500 Unit Tape & Reel, Add RL Suffix to Part Number |
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
500 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
500 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
20 14.1 60 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (1) |
PD |
250 2.0 3.57 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =20Apk, L =10mH, RG = 25) |
EAS |
2000 |